Development of a High temperature crystal growth facility (TKZ)


Currently, a High temperature crystal growth system is in development. The following parameters are to be implemented here:

  • Optical zone melting
  • Pressure up to 10 bar
  • Temperatures up to 3000°C
  • Lamp power 7kW (optional up to 15kW)
  • oxygen-free atmosphere
  • patented temperature measurement
  • Rotary-pulling drive for pulling speed 0,1-2000 mm/h

If you have special needs or desires in such a facility, please let us know via the Contact form.
Wir sind bemüht uns schon bei der Konzeption an den Anregungen der Wissenschaftler zu orientieren um möglichst maßgeschneiderte Anlagen produzieren zu können.